Ion beam etching technology helps in removal of material from the target substrate by the use of a precisely controlled and directed beam of charged ions. The ion beam etching source generates a plasma from various noble gases especially argon. A set of electrically charged grids system is used to provide the angular divergence and driving force of the ions within the beam. The beam of ion strikes the substrate and helps to remove various material by physical sputtering. Ion beam etching technology are increasingly used in the manufacturing process of various semiconductor devices. Currently, ion beam etching technology also find its application in fabricating high performing nonvolatile memory, specifically in Spin Transfer Torque MRAM (Magnetoresistive RAM) devices. Rising demand from various semiconductor manufacturers to manufacture devices having improved product density, tighter tolerance and high yield is the most important factor anticipated to trigger the demand of ion beam e...